Einar Sveinbjörnsson

Visar 41 publikationer

2015

Hysteresis modeling in graphene field effect transistors

Michael Winters, Einar Sveinbjörnsson, Niklas Rorsman
Journal of Applied Physics. Vol. 117 (7), p. Art. no, 074501-
Artikel i vetenskaplig tidskrift
2010

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Martin Fagerlind, Fredrik Allerstam, Einar Sveinbjörnsson et al
Journal of Applied Physics. Vol. 108 (1)
Artikel i vetenskaplig tidskrift
2009

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

M. Dammann, W. Pletschen, P. Waltereit et al
Microelectronics and Reliability. Vol. 49 (5), p. 474-477
Artikel i vetenskaplig tidskrift
2009

A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

Fredrik Allerstam, Einar Sveinbjörnsson
Materials Science Forum. Vol. 600-603, p. 755-758
Paper i proceeding
2009

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance

Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling et al
Materials Science Forum. Vol. 600-603, p. 1151-1154
Paper i proceeding
2009

Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation

V. Tilak, K. Matocha, G. Dunne et al
IEEE Transactions on Electron Devices. Vol. 56 (2), p. 162-169
Artikel i vetenskaplig tidskrift
2009

Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

Per-Åke Nilsson, Mattias Sudow, Fredrik Allerstam et al
Materials Science Forum. Vol. 600-603, p. 1103-1106
Artikel i vetenskaplig tidskrift
2009

Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Fredrik Allerstam, Einar Sveinbjörnsson
Materials Science Forum. Vol. 615 617, p. 537-540
Paper i proceeding
2009

Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

V. Tilak, K. Matocha, G. Dunne et al
Materials Science Forum. Vol. 600-603, p. 687-690
Paper i proceeding
2008

Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Kristoffer Andersson et al
GigaHertz Symposium 2008, p. 78-
Paper i proceeding
2008

Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Hyung-Seok Lee, Martin Domeij, Carl-Mikael Zetterling et al
Applied Physics Letters. Vol. 92, p. 082113-
Artikel i vetenskaplig tidskrift
2008

Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs

Per-Åke Nilsson, Fredrik Allerstam, Mattias Sudow et al
IEEE Transactions on Electron Devices. Vol. 55 (8), p. 1875-1879
Artikel i vetenskaplig tidskrift
2007

A comparative study of surface passivation on SiC BJTs with high current gain

H. S. Lee, M. Domeij, C. M. Zetterling et al
Materials Science Forum. Vol. 556-557, p. 631-634
Artikel i vetenskaplig tidskrift
2007

High Frequency 4H-SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Per-Åke Nilsson et al
Materials Science Forum. Vol. 556-557, p. 795-798
Paper i proceeding
2007

Design and Fabrication of 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Einar Sveinbjörnsson et al
IEEE Transactions on Electron Devices. Vol. 54 (12), p. 3138-3145
Artikel i vetenskaplig tidskrift
2007

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Fredrik Allerstam, Halldor Olafsson, Gudjon Gudjonsson et al
Journal of Applied Physics. Vol. 101, p. 124502-
Artikel i vetenskaplig tidskrift
2007

Sodium Enhanced Oxidation of Si-face 4H-SiC: a Method to Remove Near Interface Traps

Einar Sveinbjörnsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 556-557, p. 487-492
Paper i proceeding
2007

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Semiconductor Science and Technology. Vol. 22 (4), p. 307-311
Artikel i vetenskaplig tidskrift
2007

1200V 5.2 mohmcm2 4H-SiC BJTs with a high common-emitter current gain

H. S. Lee, M. Domeij, C.M. Zetterling et al
IEEE Electron Device Letters. Vol. 28 (11), p. 1007-1009
Artikel i vetenskaplig tidskrift
2007

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Fredrik Allerstam, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Materials Science Forum. Vol. 556-557, p. 517-520
Paper i proceeding
2006

High channel mobility 4H-SiC MOSFETs

Einar Sveinbjörnsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 527-529, p. 961-966
Paper i proceeding
2006

High power-density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Materials Science Forum. Vol. 527-529, p. 1277-1280
Paper i proceeding
2006

High Power Density 4H-SiC RF MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
IEEE Electron Device Letters. Vol. 27 (6), p. 469-471
Artikel i vetenskaplig tidskrift
2006

Fabrication and characterization of field-plated buried-gate SiC MESFETs

Kristoffer Andersson, Mattias Sudow, Per-Åke Nilsson et al
IEEE Electron Device Letters. Vol. 27 (7), p. 573-575
Artikel i vetenskaplig tidskrift
2005

Interfaces between 4H-SiC and thermally grown SiO2: Microstructure, nanochemistry, and near-interface traps

E. Pippel, J Woltersdorf, Halldor Olafsson et al
Journal of Applied Physics. Vol. 97, p. 034302-
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material

Einar Sveinbjörnsson, Halldor Olafsson, Gudjon Gudjonsson et al
Materials Science Forum. Vol. 483-485, p. 841-844
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
IEEE Electron Device Letters. Vol. 26 (2), p. 96-98
Artikel i vetenskaplig tidskrift
2005

Fabrication of high power-density SiC MOSFETs

Gudjon Gudjonsson, Fredrik Allerstam, Halldor Olafsson et al
Proceedings of the GHz 2005 conference, Uppsala, Sweden
Konferensbidrag (offentliggjort, men ej förlagsutgivet)
2005

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Halldor Olafsson, Gudjon Gudjonsson, Fredrik Allerstam et al
Electronics Letters. Vol. 41 (14), p. 825-826
Artikel i vetenskaplig tidskrift
2005

Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material

Gudjon Gudjonsson, Halldor Olafsson, Fredrik Allerstam et al
Materials Science Forum. Vol. 483-485, p. 833-836
Artikel i vetenskaplig tidskrift
2005

High field effect mobility in 6H-SiC MOSFETs with gate oxides grown in alumina environment

Fredrik Allerstam, Gudjon Gudjonsson, Halldor Olafsson et al
Materials Science Forum. Vol. 483-485, p. 837-840
Artikel i vetenskaplig tidskrift
2005

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC

Tamara Rudenko, I. Osiyuk, I. Tyagulski et al
Solid State Electronics. Vol. 49, p. 545-553
Artikel i vetenskaplig tidskrift
2004

Analysis of the electrono traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

Tamara Rudenko, Halldor Olafsson, Einar Sveinbjörnsson et al
Microelectronics Engineering. Vol. 72, p. 213-
Artikel i vetenskaplig tidskrift
2004

Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)

Gudjon Gudjonsson, Halldor Olafsson, Einar Sveinbjörnsson
Materials Science Forum. Vol. 457-460, p. 1425-1428
Artikel i vetenskaplig tidskrift
2004

A comparison between SiO2/4H-SiC interface traps on (0001) and (11-20) faces

Halldor Olafsson, Christer Hallin, Einar Sveinbjörnsson
Materials Science Forum. Vol. 457-460, p. 1305-1308
Artikel i vetenskaplig tidskrift
2004

High field effect electron mobility in Si face 4H-SiC MOSFET

Halldor Olafsson, Gudjon Gudjonsson, Einar Sveinbjörnsson et al
Electronics Letters. Vol. 40, p. 508-510
Artikel i vetenskaplig tidskrift
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
Applied Physics Letters. Vol. 83, p. 3578-
Artikel i vetenskaplig tidskrift
2003

Selected thermal emission of electrons from different configurations in InAs/GaAs quantum dots

Olof Engström, Mikael Malmkvist, Ying Fu et al
International Conference on Trends in Nanotechnology, Salamanca, Spain
Paper i proceeding
2003

Thermal emission of electrons from selected s shell configurations in InAs/GaAs quantum dots

Mikael Malmkvist, Ying Fu, Halldor Olafsson et al
Applid Physics Letters. Vol. 85, p. 3578-
Artikel i vetenskaplig tidskrift
1998

Electroluminescence from silicon p-n junctions prepared by wafer bonding

Einar Sveinbjörnsson, Stefan Bengtsson, J. Weber et al
Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, p. 264-
Paper i proceeding
1994

Electrical Properties of Gold-related Defect Complexes in Silicon

Einar Sveinbjörnsson
Doktorsavhandling

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