Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC
Paper i proceeding, 2009

In this work the effect of oxidation temperature of 4H-SiC on the density of nearinterface traps is studied. It is seen that the portion of traps with slower emission times decreases with increasing oxidation temperature. Despite this reduction, high temperature oxidation alone is not useful to achieve low density of interface traps at the SiO2/4H-SiC interface.

TDRC

MOS

High temperature oxidation

Interface trap density

Författare

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Materials Science Forum

0255-5476 (ISSN)

Vol. 615 617 537-540

Ämneskategorier

Elektroteknik och elektronik

DOI

10.4028/www.scientific.net/MSF.615-617.537

ISBN

978-087849334-0

Mer information

Skapat

2017-12-13