Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

Paper in proceeding, 2009

In this work the effect of oxidation temperature of 4H-SiC on the density of nearinterface traps is studied. It is seen that the portion of traps with slower emission times decreases with increasing oxidation temperature. Despite this reduction, high temperature oxidation alone is not useful to achieve low density of interface traps at the SiO2/4H-SiC interface.