Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
Artikel i vetenskaplig tidskrift, 2010

Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3 x 10(12) and 7.1 x 10(12) cm(-2). For the traps, the peak density of interface states is varying between 16 x 10(12) and 31 x 10(12) cm(-2) eV(-1) for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428442]

layers

field-effect transistors

gan

surface passivation

algan/gan hemts

growth

Författare

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Anelia Kakanakova-Georgieva

Linköpings universitet

A. Lundskog

Linköpings universitet

Urban Forsberg

Linköpings universitet

E. Janzen

Linköpings universitet

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 108 1 014508

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1063/1.3428442