Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated using Sodium Enhanced Oxidation Technique

Paper i proceeding, 2009

The improvement of the SiC-SiO(2) interface has been the main focus of research in SiC MOSFET technology due to the presence of high density of interface traps (D(it)) leading to poor threshold voltage temperature stability and poor mobility. In SiC MOSFETs with the gate oxide grown in the presence of sodium, known as sodium enhanced oxidation(SEO), a lower Dit and higher field effect mobility has been observed [1]. Hall effect measurements were performed from 125 degrees K-225 degrees K on such MOSFET samples. The Hall measurements were made as a function of temperature for various sheet charge concentrations. The sheet charge density was measured as a function of gate bias at 225 degrees K and there is very little trapped charge in the sample with oxide grown by SEO while about 50% of the total charge is trapped in a sample with N(2)O grown oxide annealed in NO. In samples with oxide grown by SEO, there is a monotonic increase in mobility with sheet charge density and the mobility also increases with temperature. This is an indication that the main scattering mechanism is Coulomb scattering in this regime.