1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
Paper i proceeding, 2009

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BV(CEO)) of 1200 V, a maximum current gain (beta) of 60 and the low on-resistance (R(sp-on))of 5.2 m Omega cm(2). The high gain is attributed to an improved surface passivation SiO(2) layer which was grown in N(2)O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N(2)O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO(2) passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm x 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop Of V(CE)=2V at I(C)=15 A (J(C)=460 A/cm(2)).

Emitter size effect

Bipolar Junction Transistor

Surface recombination

Junction Termination


Hyung-Seok Lee

Kungliga Tekniska Högskolan (KTH)

Martin Domeij

Kungliga Tekniska Högskolan (KTH)

Carl-Mikael Zetterling

Kungliga Tekniska Högskolan (KTH)

Reza Ghandi

Kungliga Tekniska Högskolan (KTH)

Mikael Östling

Kungliga Tekniska Högskolan (KTH)

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 600-603 1151-1154
9780878493579 (ISBN)



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