1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
Paper in proceeding, 2009
Emitter size effect
Bipolar Junction Transistor
Surface recombination
Junction Termination
Author
Hyung-Seok Lee
Royal Institute of Technology (KTH)
Martin Domeij
Royal Institute of Technology (KTH)
Carl-Mikael Zetterling
Royal Institute of Technology (KTH)
Reza Ghandi
Royal Institute of Technology (KTH)
Mikael Östling
Royal Institute of Technology (KTH)
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 600-603 1151-11549780878493579 (ISBN)
Subject Categories
Materials Engineering
Condensed Matter Physics
DOI
10.4028/www.scientific.net/msf.600-603.1151
ISBN
9780878493579