1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance
Paper in proceeding, 2009

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BV(CEO)) of 1200 V, a maximum current gain (beta) of 60 and the low on-resistance (R(sp-on))of 5.2 m Omega cm(2). The high gain is attributed to an improved surface passivation SiO(2) layer which was grown in N(2)O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N(2)O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO(2) passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm x 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop Of V(CE)=2V at I(C)=15 A (J(C)=460 A/cm(2)).

Emitter size effect

Bipolar Junction Transistor

Surface recombination

Junction Termination

Author

Hyung-Seok Lee

Royal Institute of Technology (KTH)

Martin Domeij

Royal Institute of Technology (KTH)

Carl-Mikael Zetterling

Royal Institute of Technology (KTH)

Reza Ghandi

Royal Institute of Technology (KTH)

Mikael Östling

Royal Institute of Technology (KTH)

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 600-603 1151-1154
9780878493579 (ISBN)

Subject Categories

Materials Engineering

Condensed Matter Physics

DOI

10.4028/www.scientific.net/msf.600-603.1151

ISBN

9780878493579

More information

Latest update

2/26/2018