A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen
Paper i proceeding, 2009

This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400°C in forming gas ambient. © (2009) Trans Tech Publications, Switzerland.

Författare

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Materials Science Forum

0255-5476 (ISSN)

Vol. 600-603 755-758

Ämneskategorier

Materialteknik

Den kondenserade materiens fysik

DOI

10.4028/3-908453-11-9.755