Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Artikel i vetenskaplig tidskrift, 2009
Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 mu m wide and 0.5 mu m long AlGaN/GaN HEMTs at a drain voltage of V-d = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers. (C) 2009 Elsevier Ltd. All rights reserved.
transistors
Författare
M. Dammann
Fraunhofer-Gesellschaft
W. Pletschen
Fraunhofer-Gesellschaft
P. Waltereit
Fraunhofer-Gesellschaft
W. Bronner
Fraunhofer-Gesellschaft
R. Quay
Fraunhofer-Gesellschaft
S. Muller
Fraunhofer-Gesellschaft
M. Mikulla
Fraunhofer-Gesellschaft
O. Ambacher
Fraunhofer-Gesellschaft
P. J. van der Wel
NXP Semiconductors Netherlands
S. Murad
NXP Semiconductors Netherlands
T. Rodle
NXP Semiconductors Netherlands
R. Behtash
United Monolithic Semiconductors
F. Bourgeois
United Monolithic Semiconductors
K. Riepe
United Monolithic Semiconductors
Martin Fagerlind
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Einar Sveinbjörnsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Microelectronics and Reliability
0026-2714 (ISSN)
Vol. 49 5 474-477Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
DOI
10.1016/j.microrel.2009.02.005