Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
Artikel i vetenskaplig tidskrift, 2009

Excellent reliability performance of AlGaN/GaN HEMTs on SiC substrates for next generation mobile communication systems has been demonstrated using DC and RF stress tests on 8 x 60 mu m wide and 0.5 mu m long AlGaN/GaN HEMTs at a drain voltage of V-d = 50 V. Drain current recovery measurements after stress indicate that the degradation is partly caused by slow traps generated in the SiN passivation or in the HEMT epitaxial layers. The traps in the SiN passivation layer were characterized using high and low frequency capacitance-voltage (CV) measurements of MIS test structures on thick lightly doped GaN layers. (C) 2009 Elsevier Ltd. All rights reserved.

transistors

Författare

M. Dammann

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

W. Pletschen

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

P. Waltereit

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

W. Bronner

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

R. Quay

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

S. Muller

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

M. Mikulla

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

O. Ambacher

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

P. J. van der Wel

NXP Semiconductors

S. Murad

NXP Semiconductors

T. Rodle

NXP Semiconductors

R. Behtash

United Monolithic Semiconductors

F. Bourgeois

United Monolithic Semiconductors

K. Riepe

United Monolithic Semiconductors

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Einar Sveinbjörnsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Microelectronics and Reliability

0026-2714 (ISSN)

Vol. 49 5 474-477

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1016/j.microrel.2009.02.005

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2017-10-07