Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material
Journal article, 2005
Author
Gudjon Gudjonsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Halldor Olafsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thomas Rödle
Hendrikus Jos
Materials Science Forum
Vol. 483-485 833-836
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering