High Frequency 4H-SiC MOSFETs
Paper in proceeding, 2007
We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax11.2 GHz for a device with 0.5 μm nominal channel length. Functional devices with 0.3 μm nominal channel length were also made. These devices gave fT=T5.1 GHz and fmax=T9.5 GHz but they have lower breakdown voltages and therefore lower overall performance. The measured devices are double fingered with 0.8 mm total gate width.
High frequency
RF
MOSFET
High power
4H-SiC
Author
Gudjon Gudjonsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Hans Hjelmgren
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2)
Thomas Rödle
NXP Semiconductors Netherlands
Hendrikus Jos
NXP Semiconductors Netherlands
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 556-557 795-7980878494421 (ISBN)
Subject Categories (SSIF 2025)
Materials Engineering
Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.4028/0-87849-442-1.795