High Frequency 4H-SiC MOSFETs
Paper in proceeding, 2007

We present new results on 4H-SiC RF power MOSFETs. By improvements in device layout we obtain better high frequency performance compared to the first generation of devices. An extrinsic transition frequency fT=11.4 GHz was achieved and fmax11.2 GHz for a device with 0.5 μm nominal channel length. Functional devices with 0.3 μm nominal channel length were also made. These devices gave fT=T5.1 GHz and fmax=T9.5 GHz but they have lower breakdown voltages and therefore lower overall performance. The measured devices are double fingered with 0.8 mm total gate width.

High frequency

RF

MOSFET

High power

4H-SiC

Author

Gudjon Gudjonsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2)

Thomas Rödle

NXP Semiconductors Netherlands

Hendrikus Jos

NXP Semiconductors Netherlands

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Materials Science Forum

0255-5476 (ISSN) 16629752 (eISSN)

Vol. 556-557 795-798
0878494421 (ISBN)

Subject Categories (SSIF 2025)

Materials Engineering

Subject Categories (SSIF 2011)

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.4028/0-87849-442-1.795

More information

Latest update

6/30/2025