Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Journal article, 2010
Measured and simulated transient characteristics of
a SiC metal–semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.
technology computer-aided design (TCAD)
silicon carbide
microwave transistor
Charge carrier processes
MESFET power amplifiers
Author
Hans Hjelmgren
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 57 3 729-732 5404423Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TED.2009.2039679