Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Journal article, 2010

Measured and simulated transient characteristics of a SiC metal–semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.

technology computer-aided design (TCAD)

silicon carbide

microwave transistor

Charge carrier processes

MESFET power amplifiers

Author

Hans Hjelmgren

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Fredrik Allerstam

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 57 3 729-732

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TED.2009.2039679

More information

Created

10/7/2017