Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs
Journal article, 2009
Author
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Sudow
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Fredrik Allerstam
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Einar Sveinbjörnsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Hans Hjelmgren
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 600-603 1103-1106Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.4028/www.scientific.net/MSF.600-603.1103