Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O)
Journal article, 2004

channel mobility

MOSFET

nitrous oxide

interface states

Author

Gudjon Gudjonsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Halldor Olafsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Einar Sveinbjörnsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Other publications Research

Materials Science Forum

Vol. 457-460 1425-1428

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/6/2017

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