Shallow traps at the SiO₂/SiC interface
Licentiatavhandling, 2002
silicon carbide (SiC)
deep level transient spectroscopy (DLTS)
capacitance-voltage (C-V)
metal-oxide-semiconductor (MOS)
thermally stimulated current (TSC)
interface states
Författare
Halldor Olafsson
Institutionen för mikroelektronik
Ämneskategorier
Annan elektroteknik och elektronik
Technical report L - School of Electrical Engineering, Chalmers University of Technology.: 446