Shallow traps at the SiO₂/SiC interface
Licentiatavhandling, 2002

silicon carbide (SiC)

deep level transient spectroscopy (DLTS)

capacitance-voltage (C-V)

metal-oxide-semiconductor (MOS)

thermally stimulated current (TSC)

interface states

Författare

Halldor Olafsson

Institutionen för mikroelektronik

Ämneskategorier

Annan elektroteknik och elektronik

Technical report L - School of Electrical Engineering, Chalmers University of Technology.: 446