Electrical Characterization of Thermally Oxidized Silicon Carbide
Doktorsavhandling, 2008
Författare
Fredrik Allerstam
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures
Electronics Letters,; Vol. 41(2005)p. 825-826
Artikel i vetenskaplig tidskrift
Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation
Materials Science Forum,; Vol. 556-557(2007)p. 517-520
Paper i proceeding
Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs
Semiconductor Science and Technology,; Vol. 22(2007)p. 307-311
Artikel i vetenskaplig tidskrift
High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
IEEE Electron Device Letters,; Vol. 26(2005)p. 96-98
Artikel i vetenskaplig tidskrift
A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation
Journal of Applied Physics,; Vol. 101(2007)p. 124502-
Artikel i vetenskaplig tidskrift
Ämneskategorier
Övrig annan teknik
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
ISBN
978-91-7385-088-9
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 2769
Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 121
Kollektorn (A423), MC2
Opponent: Prof. Bengt Svensson, Department of Physics, Oslo University, Norway