Electrical Characterization of Thermally Oxidized Silicon Carbide
Doktorsavhandling, 2008

Kollektorn (A423), MC2
Opponent: Prof. Bengt Svensson, Department of Physics, Oslo University, Norway

Författare

Fredrik Allerstam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Stable operation of high mobility 4H-SiC MOSFETs at elevated temperatures

Electronics Letters,; Vol. 41(2005)p. 825-826

Artikel i vetenskaplig tidskrift

Formation of deep traps at the 4H-SiC/SiO2 interface when utilizing sodium enhanced oxidation

Materials Science Forum,; Vol. 556-557(2007)p. 517-520

Paper i proceeding

Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs

Semiconductor Science and Technology,; Vol. 22(2007)p. 307-311

Artikel i vetenskaplig tidskrift

High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material

IEEE Electron Device Letters,; Vol. 26(2005)p. 96-98

Artikel i vetenskaplig tidskrift

A strong reduction in the density of near-interface traps at the SiO2/4H-SiC interface by sodium enhanced oxidation

Journal of Applied Physics,; Vol. 101(2007)p. 124502-

Artikel i vetenskaplig tidskrift

Ämneskategorier

Övrig annan teknik

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

ISBN

978-91-7385-088-9

Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 2769

Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology: 121

Kollektorn (A423), MC2

Opponent: Prof. Bengt Svensson, Department of Physics, Oslo University, Norway