Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Paper i proceeding, 2015

Monte Carlo simulations forecast Gunn-like oscillations at ∼0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the oscillations and can increase their frequency. On the other hand, the ratio between cap and recess charges plays an important role for the onset of oscillations. A high level of traps in the recess region may completely attenuate the emission.

Författare

A. Rodriguez-Fernandez

Universidad de Salamanca

Ignacio Íñiguez-De-La-Torre

Universidad de Salamanca

Ó García-Pérez

Universidad de Salamanca

S. García

Universidad de Salamanca

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

T. Gonzalez

Universidad de Salamanca

J. Mateos

Universidad de Salamanca

Susana Muñoz Pérez

Universidad de Salamanca

Journal of Physics: Conference Series

1742-6588 (ISSN)

Vol. 647 1 012039

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1088/1742-6596/647/1/012039

Mer information

Senast uppdaterat

2018-09-03