Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes
Paper in proceedings, 2015

Monte Carlo simulations forecast Gunn-like oscillations at ∼0.75-1.25 THz in InGaAs planar recessed diodes (slot diodes); however, up to date no experimental evidence of this effect has been observed. The effects of temperature and surface charges on the emission parameters from InGaAs diodes are analyzed by means of an ensemble Monte Carlo simulator. Cooling the device down to 77 K strongly improves the amplitude of the oscillations and can increase their frequency. On the other hand, the ratio between cap and recess charges plays an important role for the onset of oscillations. A high level of traps in the recess region may completely attenuate the emission.

Author

A. Rodriguez-Fernandez

University of Salamanca

Ignacio Íñiguez-De-La-Torre

University of Salamanca

Ó García-Pérez

University of Salamanca

S. García

University of Salamanca

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

T. Gonzalez

University of Salamanca

J. Mateos

University of Salamanca

Susana Muñoz Pérez

University of Salamanca

Journal of Physics: Conference Series

17426588 (ISSN) 17426596 (eISSN)

Vol. 647 1 012039

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1088/1742-6596/647/1/012039

More information

Latest update

9/3/2018 1