Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties
Artikel i vetenskaplig tidskrift, 2015

The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al80Ga20Sb heterostructures. The process is demonstrated by processing InAs/Al80Ga20Sb self-switching diodes (SSDs). SSDs require high-resolution isolation patterns, which presents a major fabrication challenge because of the oxidation sensitivity of Al(Ga)Sb alloys. The presented fabrication process completely avoided exposure of Al(Ga)Sb to air and resulted in an isolation pattern with a feature size down to 35 nm. The process was based on a dry etch of isolating trenches, in situ removal of the resist etch mask followed by in situ encapsulation of etched surfaces by silicon nitride. The applicability of the InAs/Al80Ga20Sb SSD process was demonstrated with on-wafer RF measurements of zero-bias detection up to 315 GHz. Below 50 GHz, the detector's noise equivalent power was estimated to less than 100 pW/Hz½ .

Författare

Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

P. Sangaré

Lille I: Universite des Sciences et Technologies de Lille

G. Ducournau

Lille I: Universite des Sciences et Technologies de Lille

C. Gaquière

Lille I: Universite des Sciences et Technologies de Lille

L. Desplanque

Lille I: Universite des Sciences et Technologies de Lille

X. Wallart

Lille I: Universite des Sciences et Technologies de Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

2166-2754 (ISSN)

Vol. 33 2 021207-

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

DOI

10.1116/1.4914314

Mer information

Senast uppdaterat

2018-05-14