Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures: Fabrication and zero-bias detector properties
Journal article, 2015

The authors present a novel process for fabrication of deep submicron isolation patterns in InAs/Al80Ga20Sb heterostructures. The process is demonstrated by processing InAs/Al80Ga20Sb self-switching diodes (SSDs). SSDs require high-resolution isolation patterns, which presents a major fabrication challenge because of the oxidation sensitivity of Al(Ga)Sb alloys. The presented fabrication process completely avoided exposure of Al(Ga)Sb to air and resulted in an isolation pattern with a feature size down to 35 nm. The process was based on a dry etch of isolating trenches, in situ removal of the resist etch mask followed by in situ encapsulation of etched surfaces by silicon nitride. The applicability of the InAs/Al80Ga20Sb SSD process was demonstrated with on-wafer RF measurements of zero-bias detection up to 315 GHz. Below 50 GHz, the detector's noise equivalent power was estimated to less than 100 pW/Hz½ .

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

P. Sangaré

Lille 1 University of Science and Technology

G. Ducournau

Lille 1 University of Science and Technology

C. Gaquière

Lille 1 University of Science and Technology

L. Desplanque

Lille 1 University of Science and Technology

X. Wallart

Lille 1 University of Science and Technology

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

2166-2754 (ISSN)

Vol. 33 2 021207-

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1116/1.4914314

More information

Latest update

5/14/2018