Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

Mattias Thorsell; Kristoffer Andersson; Martin Fagerlind; Mattias Sudow; Per-Åke Nilsson; Niklas Rorsman

Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs
Paper i proceeding, 2008

The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the highfrequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.

Noise

gallium-nitride

thermal