Terahertz detection in zero-bias InAs self-switching diodes at room temperature
Artikel i vetenskaplig tidskrift, 2013

RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range of 2-315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/Hz(1/2) was observed for the SSD when driven by a 50 Omega source. With a conjugately matched source, a responsivity of 34 V/W and an NEP of 65 pW/Hz(1/2) were estimated. An antenna-coupled SSD demonstrated a responsivity of 0.7 V/W at 600 GHz. The results demonstrate the feasibility of zero-bias terahertz detection with high-electron mobility InAs SSDs up to and beyond 100 GHz.


Andreas Westlund

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

P. Sangare

Université de Lille

G. Ducournau

Université de Lille

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

C. Gaquiere

Université de Lille

L. Desplanque

Université de Lille

X. Wallart

Université de Lille

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 103 13 133504

Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)

Europeiska kommissionen (EU) (EC/FP7/243845), 2010-01-01 -- 2013-01-31.





Mer information