Terahertz detection in zero-bias InAs self-switching diodes at room temperature
Journal article, 2013

RF characterization of InAs self-switching diodes (SSDs) is reported. On-wafer measurements revealed no roll-off in responsivity in the range of 2-315 GHz. At 50 GHz, a responsivity of 17 V/W and a noise-equivalent power (NEP) of 150 pW/Hz(1/2) was observed for the SSD when driven by a 50 Omega source. With a conjugately matched source, a responsivity of 34 V/W and an NEP of 65 pW/Hz(1/2) were estimated. An antenna-coupled SSD demonstrated a responsivity of 0.7 V/W at 600 GHz. The results demonstrate the feasibility of zero-bias terahertz detection with high-electron mobility InAs SSDs up to and beyond 100 GHz.

Author

Andreas Westlund

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

P. Sangare

Université de Lille

G. Ducournau

Université de Lille

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

C. Gaquiere

Université de Lille

L. Desplanque

Université de Lille

X. Wallart

Université de Lille

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 103 13 133504

Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)

European Commission (FP7), 2010-01-01 -- 2013-01-31.

Subject Categories

Physical Sciences

DOI

10.1063/1.4821949

More information

Created

10/7/2017