Planar SiC Schottky Diodes for MMIC Applications
Artikel i vetenskaplig tidskrift, 2004

Planar Schottky diodes intended for SiC MMIC applications have been designed, processed and characterised. To our knowledge, this is the first article published on this type of device. The planar design is beneficial since semi-insulating substrates are used in microwave designs to minimise parasitics. The component geometry was studied and a simple distributed model was formulated. Extrinsic cut-off frequencies up to 30.8 GHz were calculated from LCR-measurements.

MMIC

SiC

Schottky

microwave

Författare

Mattias Sudow

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963)

Vol. 1 153-156

Ämneskategorier

Annan elektroteknik och elektronik

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2017-10-07