Planar SiC Schottky Diodes for MMIC Applications

Journal article, 2004

Planar Schottky diodes intended for SiC MMIC applications have been designed, processed and characterised. To our knowledge, this is the first article published on this type of device. The planar design is beneficial since semi-insulating substrates are used in microwave designs to minimise parasitics. The component geometry was studied and a simple distributed model was formulated. Extrinsic cut-off frequencies up to 30.8 GHz were calculated from LCR-measurements.