An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Artikel i vetenskaplig tidskrift, 2008
A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an ${rm NF}_{min}$ of 1.4 dB at $X$ -band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.
Författare
Mattias Sudow
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Martin Fagerlind
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Kristoffer Andersson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niklas Billström
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 56 8 1827-1833Ämneskategorier
Annan elektroteknik och elektronik