An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Artikel i vetenskaplig tidskrift, 2008

A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an ${rm NF}_{min}$ of 1.4 dB at $X$ -band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.

Författare

Mattias Sudow

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Billström

Per-Åke Nilsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 56 8 1827-1833

Ämneskategorier

Annan elektroteknik och elektronik

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2017-10-07