Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory
Paper in proceedings, 2014

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

CMOS

SiGe

wideband

class-e

efficiency

Author

MUSTAFA ÖZEN

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

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M.P. Van Der Heijden

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D.M.W. Leenaerts

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Hendrikus Jos

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Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

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Digest of Papers - 2014 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2014; Tampa Bay, FL; United States; 1 June 2014 through 3 June 2014

1529-2517 (ISSN)

243-246

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/RFIC.2014.6851709

Publication data connected to DOI

ISBN

978-147993862-9

More information

Latest update

12/4/2018

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