Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory
Paper in proceedings, 2014

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

wideband

efficiency

class-e

SiGe

CMOS

Author

MUSTAFA ÖZEN

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

M. Acar

NXP Semiconductors Netherlands

M.P. Van Der Heijden

NXP Semiconductors Netherlands

M. Apostolidou

NXP Semiconductors Netherlands

D.M.W. Leenaerts

NXP Semiconductors Netherlands

Hendrikus Jos

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

NXP Semiconductors Netherlands

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Digest of Papers - 2014 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2014; Tampa Bay, FL; United States; 1 June 2014 through 3 June 2014

1529-2517 (ISSN)

243-246

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/RFIC.2014.6851709

ISBN

978-147993862-9

More information

Latest update

10/29/2020