Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory
Paper i proceeding, 2014

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

CMOS

efficiency

wideband

SiGe

class-e

Författare

MUSTAFA ÖZEN

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

M. Acar

NXP Semiconductors

M.P. Van Der Heijden

NXP Semiconductors

M. Apostolidou

NXP Semiconductors

D.M.W. Leenaerts

NXP Semiconductors

Hendrikus Jos

NXP Semiconductors

Chalmers

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Digest of Papers - 2014 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2014; Tampa Bay, FL; United States; 1 June 2014 through 3 June 2014

1529-2517 (ISSN)

243-246

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/RFIC.2014.6851709

ISBN

978-147993862-9

Mer information

Senast uppdaterat

2018-09-10