Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory
Paper i proceeding, 2014

In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

wideband

efficiency

class-e

SiGe

CMOS

Författare

MUSTAFA ÖZEN

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

M. Acar

NXP Semiconductors Netherlands

M.P. Van Der Heijden

NXP Semiconductors Netherlands

M. Apostolidou

NXP Semiconductors Netherlands

D.M.W. Leenaerts

NXP Semiconductors Netherlands

Hendrikus Jos

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

NXP Semiconductors Netherlands

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

15292517 (ISSN)

243-246
978-147993862-9 (ISBN)

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/RFIC.2014.6851709

ISBN

978-147993862-9

Mer information

Senast uppdaterat

2023-08-08