Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory
Paper i proceeding, 2014
In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.
wideband
efficiency
class-e
SiGe
CMOS
Författare
MUSTAFA ÖZEN
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
M. Acar
NXP Semiconductors Netherlands
M.P. Van Der Heijden
NXP Semiconductors Netherlands
M. Apostolidou
NXP Semiconductors Netherlands
D.M.W. Leenaerts
NXP Semiconductors Netherlands
Hendrikus Jos
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
NXP Semiconductors Netherlands
Christian Fager
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Digest of Papers - 2014 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2014; Tampa Bay, FL; United States; 1 June 2014 through 3 June 2014
1529-2517 (ISSN)
243-246978-147993862-9 (ISBN)
Ämneskategorier
Annan elektroteknik och elektronik
DOI
10.1109/RFIC.2014.6851709
ISBN
978-147993862-9