Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD
Paper in proceeding, 2005
Author
Mariusz Rudzinski
Vincent Desmaris
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Paul Van Hal
J Weyher
Paul Hageman
Kristina Dynefors
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thomas Rödle
Hendrikus Jos
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Pol larsen
International Conference on Nitride Semiconductor ICNS-6
Subject Categories
Manufacturing, Surface and Joining Technology
Other Engineering and Technologies not elsewhere specified
Other Electrical Engineering, Electronic Engineering, Information Engineering