Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures
Paper in proceeding, 2008
Power amplifiers
GaN hemt
Polar transmitter
LDMOS
Author
Hossein Mashad Nemati
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Christian Fager
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Ulf Gustavsson
Ericsson
Hendrikus Jos
NXP Semiconductors Netherlands
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
1505-1508 4633066978-142441781-0 (ISBN)
Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/MWSYM.2008.4633066
ISBN
978-142441781-0