Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures
Paper in proceedings, 2008

In this paper, switched mode power amplifiers with different classes of operation and device technologies are characterized versus input power and output supply voltage. The results are used to identify optimal control schemes for use in polar transmitter architectures. Then the effects of different control schemes on the requirements for the power amplifier, and the envelope amplifier, as the main building blocks of this architecture, are investigated.

Power amplifiers

Polar transmitter

LDMOS

GaN hemt

Author

Hossein Mashad Nemati

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Ulf Gustavsson

Ericsson AB

Hendrikus Jos

NXP Semiconductors

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1505-1508 4633066

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2008.4633066

ISBN

978-142441781-0

More information

Latest update

11/19/2018