Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures
Paper i proceeding, 2008

In this paper, switched mode power amplifiers with different classes of operation and device technologies are characterized versus input power and output supply voltage. The results are used to identify optimal control schemes for use in polar transmitter architectures. Then the effects of different control schemes on the requirements for the power amplifier, and the envelope amplifier, as the main building blocks of this architecture, are investigated.

Power amplifiers

Polar transmitter

LDMOS

GaN hemt

Författare

Hossein Mashad Nemati

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ulf Gustavsson

Ericsson AB

Hendrikus Jos

NXP Semiconductors

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1505-1508 4633066

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2008.4633066

ISBN

978-142441781-0

Mer information

Senast uppdaterat

2018-11-19