Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs
Paper in proceedings, 2008

The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.

Modelling

Thermal

Small signal

GaN

HEMT

Author

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Sudow

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per-Åke Nilsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008.

17-20

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/INMMIC.2008.4745703

ISBN

978-1-4244-2645-4

More information

Created

10/7/2017