DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
Journal article, 2013
Chemical vapor deposition (CVD)
Passivation
Oxidation
Leakage-current
InAs/AlSb high electron mobility transistor (HEMT)
In situ
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Eric Lefebvre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
L. Desplanque
University of Lille
X. Wallart
University of Lille
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Solid-State Electronics
0038-1101 (ISSN)
Vol. 87 85-89Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.sse.2013.06.008