Eric Lefebvre
Showing 13 publications
Gate-recess Technology for InAs/AlSb HEMTs
Narrow band gap III-V based-FET for ultra low power high frequency analog applications
InAs/AlSb HEMTs characterised at cryogenic temperatures
DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Development of InAs/AlSb HEMT technology for high-frequency operation
(Cl2:Ar) ICP/RIE dry etching of Al(Ga)Sb for AlSb/InAs HEMTs
DC and RF performance of 0.2-0.4µm gate length InAs/AlSb HEMTs
Characterization of insulated-gate versus Schottky-gate InAs/AlSb HEMTs
Benchmarking of low band gap III-V based HEMTs and sub-100nm CMOS under low drain voltage regime
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