DC characteristics of InAs/AlSb HEMTs at cryogenic temperatures
Paper in proceeding, 2009
Author
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per-Åke Nilsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Eric Lefebvre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Yannick Roelens
A. Noudeviwa
A. Olivier
Sylvain Bollaert
F. Danneville
Ludovic Desplanque
Xavier Wallart
Gilles Dambrine
2009 IEEE International Conference on Indium Phosphide & Related Materials
323-5
978-1-4244-3432-9 (ISBN)
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
ISBN
978-1-4244-3432-9