Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Journal article, 2008
gate length
AlSb
HEMT
InAs
Author
Malin Borg
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Eric Lefebvre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Ludovic Desplanque
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Xavier Wallart
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Yannick Roelens
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Gilles Dambrine
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Alain Cappy
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Sylvain Bollaert
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Solid-State Electronics
0038-1101 (ISSN)
Vol. 52 5 775-781Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.sse.2007.12.002