Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
Artikel i vetenskaplig tidskrift, 2008

The effect of gate-length variation on DC and RF performance of InAs/AlSb HEMTs, biased for low DC power consumption or high gain, is reported. Simultaneously fabricated devices, with gate lengths between 225 nm and 335 nm, have been compared. DC measurements revealed higher output conductance gds and slightly increased impact ionization with reduced gate length. When reducing the gate length from 335 nm to 225 nm, the DC power consumption was reduced by approximately 80% at an fT of 120 GHz. Furthermore, a 225 nm gate-length HEMT biased for high gain exhibited an extrinsic fT of 165 GHz and an extrinsic fmax of 115 GHz, at a DC power consumption of 100 mW/mm. When biased for low DC power consumption of 20 mW/mm the same HEMT exhibited an extrinsic fT and fmax of 120 GHz and 110 GHz, respectively.

gate length

AlSb

HEMT

InAs

Författare

Malin Borg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Eric Lefebvre

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mikael Malmkvist

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ludovic Desplanque

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Xavier Wallart

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Yannick Roelens

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Gilles Dambrine

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Alain Cappy

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Sylvain Bollaert

IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie

Jan Grahn

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Solid-State Electronics

0038-1101 (ISSN)

Vol. 52 775-781

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1016/j.sse.2007.12.002