Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation
Journal article, 2014
HEMT
low-power
SiN passivation
InAs/AlSb
oxidation
Author
Eric Lefebvre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Giuseppe Moschetti
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mikael Malmkvist
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
L. Desplanque
University of Lille
X. Wallart
University of Lille
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 29 3 035010Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1088/0268-1242/29/3/035010