Development of InAs/AlSb HEMT technology for high-frequency operation
Paper in proceeding, 2007

Author

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2)

Eric Lefebvre

Chalmers, Microtechnology and Nanoscience (MC2)

Malin Borg

Chalmers, Microtechnology and Nanoscience (MC2)

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2)

Ludovic Desplanque

Xavier Wallart

Yannick Roelens

Gilles Dambrine

Alain Cappy

Sylvain Bollaert

Proc. European Workshop on Compound Semiconductor Devices and Integrated Circuits

pp. 137-140

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017