DC and RF performance of 0.2-0.4┬Ám gate length InAs/AlSb HEMTs
Paper in proceedings, 2007

Author

Malin Borg

Chalmers, Microtechnology and Nanoscience (MC2)

Eric Lefebvre

Chalmers, Microtechnology and Nanoscience (MC2)

Mikael Malmkvist

Chalmers, Microtechnology and Nanoscience (MC2)

Ludovic Desplanque

Xavier Wallart

Yannick Roelens

Gilles Dambrine

Alain Cappy

Sylvain Bollaert

Jan Grahn

Chalmers, Microtechnology and Nanoscience (MC2)

Proc. 19th Indium Phosphide and Related Materials

pp. 67-70

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017