IMPROVING GAN/ALGAN/GAN HFET TRANSCONDUCTANCE AND GATE LEAKAGE BY REDUCING THE ELECTRON SHEET DENSITY THROUGH HIGH TEMPERATURE ANNEALING
Paper in proceedings, 2010

An LPCVD silicon nitride is used to passivate GaN/AlGaN/GaN heterostructures. The nitride is deposited before the high temperature annealing step that is used to form ohmic contacts. The contact annealing will reduce the electron sheet density of a non-passivated heterostructure, but is seen to have almost no effect on the LPCVD passivated heterostructure. From a first examination the reduction of ns is a negative effect. However, in this report it is shown that introducing an extra annealing step before the LPCVD deposition can be used to improve device characteristics. A pre-LPCVD annealing at 800°C reduces ns by 15%, resulting in: almost no change in sheet resistance, around 40% larger transconductance and a substantially lower gate current.

Author

Martin Fagerlind

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

The 34th Workshop on Compound Semiconductor Devices and Integrated Circuits

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017