On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
Paper in proceeding, 2013
High power devices
On-axis
Growth mechanism
Carrier lifetime
Chemical vapor deposition
Author
J. ul Hassan
Linköping University
I. Booker
Linköping University
L. Lilja
Linköping University
A. Hallen
Royal Institute of Technology (KTH)
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
P. Bergman
Linköping University
Erik Janzén
Linköping University
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 740-742 173-176St. Petersburg, Russia,
Subject Categories
Materials Engineering
DOI
10.4028/www.scientific.net/MSF.740-742.173