Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process
Journal article, 2016
AlGaN/GaN interface
interface sharpness
GaN high-electron mobility transistor (HEMT)
Author
Johan Bergsten
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
J. T. Chen
Linköping University
Sebastian Gustafsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Anna Malmros
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Urban Forsberg
Linköping University
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
E. Janzen
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 63 1 333-338 7342923Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ted.2015.2501838