Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements
Paper in proceeding, 2023
The thermal transient behaviour of GaN HEMT structures is studied using an integrated sensor placed in the close vicinity of a heat source. It is demonstrated that the method can extract time constants in the μs range for a 5 μm separation between the sensor and heat source. The study includes measurements that show how lateral separation, dissipated power, and proximity to the edge of the chip impact the temperature increase of a device. It is concluded that the method is promising for calibrating numerical models and evaluating packaging solutions.
thermal time constants
thermal sensors
electrothermal device modelling
Gallium Nitride (GaN)
thermal management
Author
Tobias Kristensen
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Andreas Divinyi
Saab
Johan Bremer
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Torbjörn M.J. Nilsson
Saab
Mattias Thorsell
Saab
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023
293-296
9782874870736 (ISBN)
18th European Microwave Integrated Circuits Conference, EuMIC 2023
Berlin, Germany,
Berlin, Germany,
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.23919/EuMIC58042.2023.10288814