Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements
Paper i proceeding, 2023
The thermal transient behaviour of GaN HEMT structures is studied using an integrated sensor placed in the close vicinity of a heat source. It is demonstrated that the method can extract time constants in the μs range for a 5 μm separation between the sensor and heat source. The study includes measurements that show how lateral separation, dissipated power, and proximity to the edge of the chip impact the temperature increase of a device. It is concluded that the method is promising for calibrating numerical models and evaluating packaging solutions.
electrothermal device modelling
thermal sensors
thermal management
thermal time constants
Gallium Nitride (GaN)
Författare
Tobias Kristensen
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Andreas Divinyi
Saab
Johan Bremer
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Torbjörn M.J. Nilsson
Saab
Mattias Thorsell
Saab
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023
293-296
9782874870736 (ISBN)
18th European Microwave Integrated Circuits Conference, EuMIC 2023
Berlin, Germany,
Berlin, Germany,
Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
DOI
10.23919/EuMIC58042.2023.10288814