A new baseband measurement system for characterization of memory effects in nonlinear microwave devices
Paper in proceedings, 2012

This paper presents a new measurement setup for characterization of memory effects in microwave devices. The proposed setup extends the standard LSNA to capture the baseband spectrum from DC up to 100 MHz. This enables characterizations of memory effects in nonlinear microwave devices when using wideband modulated signals as stimuli. The extension of the baseband spectrum down to DC is very important when characterizing slow memory effects, such as self-heating and trapping. The importance of this extension is illustrated by two-tone measurements and simulations on a GaN device to show the effects of the dynamics in the thermal impedance.

Author

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

79th ARFTG Microwave Measurement Conference, Montreal, QC: 22 June through 22 June 2012

Article number 6291190-

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ARFTG79.2012.6291190

ISBN

978-146731230-1

More information

Created

10/7/2017