Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Journal article, 2012
numerical simulation
HEMTs
Gallium nitride
heterojunctions
Author
Hans Hjelmgren
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Published in
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 59 Issue 12 p. 3344-3349 art. no 6327647Categorizing
Areas of Advance
Information and Communication Technology
Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
Identifiers
DOI
10.1109/TED.2012.2218608