Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Journal article, 2012

An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. Numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing iso-thermal numerical simulations with microwave (6 GHz) large signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.

numerical simulation

HEMTs

Gallium nitride

heterojunctions

Author

Hans Hjelmgren

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 59 12 3344-3349

Areas of Advance

Information and Communication Technology

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

Condensed Matter Physics

DOI

10.1109/TED.2012.2218608

More information

Created

10/7/2017