Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Journal article, 2012
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. Numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing iso-thermal numerical simulations with microwave (6 GHz) large signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.
numerical simulation
HEMTs
Gallium nitride
heterojunctions
Author
Hans Hjelmgren
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Electron Devices
0018-9383 (ISSN) 15579646 (eISSN)
Vol. 59 12 3344-3349 6327647Areas of Advance
Information and Communication Technology
Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/TED.2012.2218608