Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Artikel i vetenskaplig tidskrift, 2012
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. Numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing iso-thermal numerical simulations with microwave (6 GHz) large signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.
numerical simulation
HEMTs
Gallium nitride
heterojunctions
Författare
Hans Hjelmgren
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Mattias Thorsell
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Kristoffer Andersson
Gigahertzcentrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
IEEE Transactions on Electron Devices
0018-9383 (ISSN)
Vol. 59 12 3344-3349Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.1109/TED.2012.2218608