Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures
Artikel i vetenskaplig tidskrift, 2012

An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. Numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on 4H-SiC substrate is compared to measured electrical characteristics. Mobility model parameters are extracted by comparing iso-thermal numerical simulations with microwave (6 GHz) large signal measurements. The extracted model was used in static simulations, showing good agreement with measurements.

numerical simulation

HEMTs

Gallium nitride

heterojunctions

Författare

Hans Hjelmgren

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 59 3344-3349

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1109/TED.2012.2218608