Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs
Paper in proceeding, 2024

A method to suppress trapping-related effects when performing IV characterizations of field effect transistors is presented. Standard IV measurements usually utilize voltage sweeps with fixed start, stop, and step values. At high electric fields in these sweeps, the charging of electron traps with long time constants may occur. The trapped electrons cause different memory effects such as hysteresis and the kink effect. The proposed method suppresses these effects, by reordering the bias points, so to prevent charging due to high preceding electric fields. The method provides more rudimentary IV measurements, useful for e.g. technology evaluation and modeling purposes.

Wide band gap semiconductors

Gallium nitride

High electron mobility transistors

Electric fields

Author

Johan Bremer

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Thorsell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE International Conference on Microelectronic Test Structures

10719032 (ISSN) 21581029 (eISSN)


9798350329896 (ISBN)

36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024
Edinburgh, United Kingdom,

Subject Categories

Fusion, Plasma and Space Physics

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICMTS59902.2024.10520686

More information

Latest update

6/4/2024 4