Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs
Paper in proceeding, 2024
Wide band gap semiconductors
Gallium nitride
High electron mobility transistors
Electric fields
Author
Johan Bremer
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Mattias Thorsell
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE International Conference on Microelectronic Test Structures
10719032 (ISSN) 21581029 (eISSN)
9798350329896 (ISBN)
Edinburgh, United Kingdom,
Subject Categories
Fusion, Plasma and Space Physics
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/ICMTS59902.2024.10520686