Method for Suppressing Trap-Related Memory Effects in IV Characterizations of GaN HEMTs
Paper i proceeding, 2024

A method to suppress trapping-related effects when performing IV characterizations of field effect transistors is presented. Standard IV measurements usually utilize voltage sweeps with fixed start, stop, and step values. At high electric fields in these sweeps, the charging of electron traps with long time constants may occur. The trapped electrons cause different memory effects such as hysteresis and the kink effect. The proposed method suppresses these effects, by reordering the bias points, so to prevent charging due to high preceding electric fields. The method provides more rudimentary IV measurements, useful for e.g. technology evaluation and modeling purposes.

Wide band gap semiconductors

Gallium nitride

High electron mobility transistors

Electric fields

Författare

Johan Bremer

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

IEEE International Conference on Microelectronic Test Structures

10719032 (ISSN) 21581029 (eISSN)


9798350329896 (ISBN)

36th IEEE International Conference on Microelectronic Test Structures, ICMTS 2024
Edinburgh, United Kingdom,

Ämneskategorier

Fusion, plasma och rymdfysik

Annan elektroteknik och elektronik

DOI

10.1109/ICMTS59902.2024.10520686

Mer information

Senast uppdaterat

2024-06-04